Ψ DIODE CORE -Mk VI Hyperconductive Thermal Replacement Unit

Graphene DIODE CORE -Mk VI Hyperconductive Thermal Replacement Unit provides the full technical definition of the Ψ-Diode Core — Mk VI, the hyperconductive thermal emission element used inside Mk VI-class Ψ-LASER systems. It is an unencapsulated, high-power coherent emitter built around a graphene-on-diamond wafer, a sub-wavelength thermal-plasmonic cavity, a dual-contact pumping interface, and an EM-sealed optical aperture. The report details the device’s physical architecture, optical pathway, thermal-exchange geometry, electrical interface, mechanical tolerances, and functional role within complete Mk VI assemblies. The core is designed for laboratory integration, module replacement, and research-grade evaluation of Ψ-driven coherent emission. It is not a standalone device; it requires a Mk VI coherent-pressure driver, thermal-hyperconductive conditioning and proper EM shielding. The operational band spans the 18–65 THz region, delivering stable coherent output under extreme hyperconductive loading. Fabrication processes include micron-grade machining, wafer-flatness certification, optical burn-in and high-load contact testing. The Ψ-Diode Core defines the standard emission engine for all Mk VI coherent-pressure laser systems and establishes an interoperable architecture for next-generation Ψ-optical devices.

DOI: 10.5281/zenodo.17718450

Date: Nov 26, 2025

Author: Carlos Omeñaca Prado
ORCID: https://orcid.org/0009-0001-9750-5827

Resource type: Preprint
Publisher: Zenodo
License: CC0 Open Engineering Specification

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